control devices microsemi ? lowell 75 technology drive, lowell, ma 01851 tel. (978) 442-5600 high speed pin diodes description the gc4200 series are high speed (cathode base) pin diodes made with high resistivity epitaxial silicon material. these diodes are passivated with silicon dioxide for high stability and reliability and have been proven by thousands of device hours in high reliability systems. these devices can withstand storage temperatures from -65 to +200c and will operate over the range from -55 to +150c. all devices meet or exceed military environmental specifications of mil-s-19500. the gc4200 series will operate with as little as +10 ma forward bias. applications the gc4200 series can be used in rf circuits as an on/off element, as a switch, or as a current controlled resistor in attenuators ex tending over the frequency range from uhf through ku band. switch applications include high speed switches (ecm systems), tr switches, channel or antenna selection switches (telecommunications), duplexers (radar) and digital phase shifters (phased arrays). the gc4200 series are also used as passive and active limiters for low to mode rate rf power levels. attenuator type applications include amplitude modulators, agc attenuators and power levelers. electrical specifications: t a = 25c model number breakdown voltage (i r =10ua max) v b (min)(volts) junction capacitance 1 c j -10 (max) (pf) series resistance 2 (20 ma, 1 ghz) r s20 (max) (ohms) carrier lifetime (i r =6 ma, if=10 ma) t l (typ) (ns) thermal resistance (max) ( ? c/w) gc4270 70 0.06 1.5 100 80 gc4271 70 0.10 1.0 100 70 gc4272 70 0.20 0.8 100 70 gc4273 70 0.30 0.7 100 60 gc4274 70 0.40 0.6 100 50 gc4275 70 0.50 0.5 100 40 gc4210 100 0.06 1.5 200 80 gc4211 100 0.10 1.0 200 70 gc4212 100 0.20 0.75 200 70 gc4213 100 0.30 0.6 200 60 gc4214 100 0.40 0.5 200 50 gc4215 100 0.50 0.35 200 40 gc4220 250 0.06 2.5 500 80 gc4221 250 0.10 2.0 500 70 gc4222 250 0.20 1.5 500 70 gc4223 250 0.30 1.0 500 60 gc4224 250 0.40 0.8 500 50 gc4225 250 0.50 0.6 500 40 notes: 1. capacitance is measured at 1 mhz and -10 volts. 2. resistance is measured usi ng transmission loss techniques. 3. this series of devices is availa ble in standard case styles 00, 15, 30, 35 and 85, plus other styles on request. the tabulated specifications above are fo r the style 30 package. diodes may also be available in other case styles. some limitations apply / contact factory for details. each type offers trade offs in series resistance, junction capacitance and carrier lifetime; the proper choice of which depends on the end application. reverse polarity diodes (nip) and higher voltage pin and nip diodes are also available. (see data sheets for gc4300, gc 4400, and gc4500 series respectively.)
control devices microsemi ? lowell 75 technology drive, lowell, ma 01851 tel. (978) 442-5600 high speed pin diodes ratings max leakage current: 0. 5 ma at 80% of minimum rated breakdown operating temperature: -55c to +150c storage temperature: -6 5 c to +20 0 c typical performance curves
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